Extraction of Device S-Parameters within Board by using a TRL De-Embedding Technique

Kassem Hamze , Daniel Pasquet , Philippe Descamps (1, 2) , Edouard De Ledinghen

1 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
2 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique

Semiconductor devices are tested within a complex environment including a loadboard and a socket. In this paper, we propose a calibration methodology and a RF de‐embedding technique that allows the extraction of the device parameters. This method is based on the utilization of several calibration elements inspired by the TRL method. This study has been applied on an active device and the results have been validated using a real test solution.

Mots clés: De-Embedding; Industrial RF test; TRL; semiconductor test; microwave

Domaines: Micro et nanotechnologies/Microélectronique; Electronique; Autre

Kassem Hamze, Daniel Pasquet, Philippe Descamps, Edouard De Ledinghen. Extraction of Device S-Parameters within Board by using a TRL De-Embedding Technique. Microwave and Optical Technology Letters, 2018, Volume 60 (issue 11), ⟨10.1002/mop.31473⟩. ⟨hal-02190700⟩