Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform

V. Reboud (1) , J. Widiez (1) , J. Hartmann (1) , E. Gomez (1) , A. Gassenq (2) , K. Guilloy (2) , M. Bertrand (2) , S. Tardif (3) , J. Escalante (4) , N. Pauc (2) , D. Fowler (1) , E. Bellet Amalric (5) , D. Rouchon (1) , I. Duchemin (4) , M. Niquet (4) , F. Rieutord (3) , R. Geiger (6) , T. Zabel (6) , E. Marin (6) , H. Sigg (6) , J. Faist (7) , A. Chelnokov (1) , V. Calvo (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
3 NRS - Nanostructures et Rayonnement Synchrotron
4 LSIM - Laboratory of Atomistic Simulation
5 NPSC - Nanophysique et Semiconducteurs
6 PSI - Paul Scherrer Institute
7 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]

Using the Smart CutTM technology, we fabricated 200 mm optical Germanium-On-Insulator (GeOI) substrates for photonic applications. The high crystalline quality of the Ge layer opens the way to wafer-scale fabrication of photonic components such as new light emitting devices based on highly-tensile strain.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique; Micro et nanotechnologies/Microélectronique

V. Reboud, J. Widiez, J. Hartmann, E. Gomez, A. Gassenq, et al.. Fabrication of 200 mm Germanium-On-Insulator (GeOI): A step toward a Germanium photonic platform. 2016 IEEE 13th International Conference on Group IV Photonics (GFP), Aug 2016, Shanghai, China. pp.140-142, ⟨10.1109/GROUP4.2016.7739074⟩. ⟨hal-02016503⟩