Accelerated Active Ageing Test on SiC JFETs Power Module with Silver Joining Technology for High Temperature Application

Laurent Dupont (1) , Gérard Coquery (1) , Kai Kriegel (2) , Ashot Melkonyan (2)

1 INRETS/LTN - Laboratoire des Technologies Nouvelles
2 Siemens AG [Munich]

This paper presents the accelerated active power cycling test (APCT) results on SiC JFETs power module dedicated to operate at high temperature. This study partly focuses on the new chip joining technology (LTJT), which permit to use SiC JFETs transistors at higher temperatures. We present the different die attachments tested with high temperature lead solder and silver sintering joining technologies. Active power cycling results for high junction temperature Tjmax=175°C with "Tj=80°K to perform an evaluation of main damages during active test are carried out and a comparison between lead and silver chip joining technologies is presented.

Mots clés: HAUTE TEMPERATURE; ELECTRONIQUE; ENDOMMAGEMENT; ESSAI

Domaines: Electronique

Laurent Dupont, Gérard Coquery, Kai Kriegel, Ashot Melkonyan. Accelerated Active Ageing Test on SiC JFETs Power Module with Silver Joining Technology for High Temperature Application. ESREF 2009 - 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Oct 2009, Bordeaux, France. pp. 1375-1380, ⟨10.1016/j.microrel.2009.07.050⟩. ⟨hal-01701967⟩