Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-kappa/SiO2 gate stacks

Yann Michel Niquet (1) , Ivan Duchemin (1) , V. H. Nguyen (1) , François Triozon (2) , Denis Rideau (3)

1 LSIM - Laboratory of Atomistic Simulation
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 ST-CROLLES - STMicroelectronics [Crolles]

We investigate remote surface roughness (RSR) scattering by the SiO2/HfO2 interface in Fully Depleted Silicon-on-Insulator devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO2 and SiO2/HfO2 interfaces. Therefore, surface roughness and remote surface roughness cannot be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO2 interface and SiO2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-j/Metal gate technologies. (C) 2015 AIP Publishing LLC.

Mots clés: Coulomb-Scattering; Electron-Mobility; Inversion-Layers; Carrier Mobility; Monte-Carlo; Transistors; Mosfets; Dielectrics; Interface

Domaines: Physique [physics]

Yann Michel Niquet, Ivan Duchemin, V. H. Nguyen, François Triozon, Denis Rideau. Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-kappa/SiO2 gate stacks. Applied Physics Letters, 2015, 106 (2), pp.023508. ⟨10.1063/1.4906199⟩. ⟨hal-01616548⟩