Introducing 14-nm FinFET technology in Microwind

Etienne Sicard (1)

1 INSA Toulouse - Institut National des Sciences Appliquées - Toulouse

This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed.

Mots clés: nano-CMOS; FinFET; 14-nm; integrated circuits; microprocessors

Domaines: Micro et nanotechnologies/Microélectronique

Etienne Sicard. Introducing 14-nm FinFET technology in Microwind. 2017. ⟨hal-01541171⟩