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Introducing 14-nm FinFET technology in Microwind

Abstract : This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed.
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https://hal.archives-ouvertes.fr/hal-01541171
Contributor : Etienne Sicard Connect in order to contact the contributor
Submitted on : Sunday, June 18, 2017 - 12:43:43 AM
Last modification on : Wednesday, November 3, 2021 - 4:32:49 AM
Long-term archiving on: : Friday, December 15, 2017 - 4:06:47 PM

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  • HAL Id : hal-01541171, version 1

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Etienne Sicard. Introducing 14-nm FinFET technology in Microwind. 2017. ⟨hal-01541171⟩

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