Dark Current Spectroscopy in proton, neutron and ion irradiated CMOS Image Sensors

Jean-Marc Belloir 1 Vincent Goiffon 1 Pierre Magnan 1 Cédric Virmontois 2 Olivier Gilard 2 Mélanie Raine 3 Philippe Paillet 3
1 DEOS - Département Electronique, Optronique et Signal
2 CNES - Centre National d'Études Spatiales [Toulouse]
3 DAM/DIF - DAM Île-de-France
Abstract : The dark current spectroscopy is tested on twenty CMOS image sensors irradiated with protons, neutrons and various ions at different energies. The aim of this work is to differentiate the effect of coulomb and nuclear interactions on the radiation-induced dark current distribution and to identify the main radiation-induced defects responsible for the dark current increase for each type of interaction. For low-energy protons and low-energy light ions (which produce well-separated low energy coulomb interactions), we find that most of the pixels belong to a quantized dark current spectrum at low dark current. In these pixels, the dark current increase seems mainly dominated by specific point defects such as the divacancy and the vacancy-phosphorus complex. Thus, these simple defects seem to form when the displacement damage is rather low and sparse. On the contrary, for nuclear interactions (with neutrons or high-energy protons) producing high coulomb NIEL silicon PKAs or for low energy heavy ions (also having high coulomb NIEL), the DCS spectrum is not visible and all the pixels belong to an exponential hot pixel tail which extends to very high dark current. In these pixels, the dark current increase is mainly dominated by defects with close-to-midgap energy levels. These defects seem more complex than point defects because they can have many different generation rates (explaining the smooth hot pixel tail) and because they tend to form when the displacement damage is high and dense.
Keywords : Dark Current Spectroscopy (DCS) Dark current distribution CMOS Image Sensor (CIS) Pinned PhotoDiode (PPD) Coulomb interactions Rutherford scattering Elastic and inelastic nuclear interactions NIEL Irradiation Radiation-induced defects Traps Point defects Clusters Annealing Activation energy
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Conference papers
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Submitted on : Monday, April 10, 2017 - 4:30:59 PM
Last modification on : Thursday, July 25, 2019 - 4:34:16 PM

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  • HAL Id : hal-01503703, version 1
  • OATAO : 17369

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Jean-Marc Belloir, Vincent Goiffon, Pierre Magnan, Cédric Virmontois, Olivier Gilard, et al.. Dark Current Spectroscopy in proton, neutron and ion irradiated CMOS Image Sensors. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Jul 2016, Portland, United States. pp. 1-42. ⟨hal-01503703⟩

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