Validation of NIEL for >1 MeV electrons in silicon using the CCD47-20

B. Dryer (1) , P.H. Smith (1) , B. Nuns (2) , N.J. Murray (1, 3) , K.D. Stefanov (1) , J.P.D. Gow (1) , R. Burgon (1) , D.J. Hall (1) , A.D. Holland (1)

1 OU - The Open University [Milton Keynes]
2 ONERA - The French Aerospace Lab [Toulouse]
3 Dynamic Imaging Analytics Limited

For future space missions that are visiting hostile electron radiation environments, such as ESA’s JUICE mission, it is important to understand the effects of electron irradiation on silicon devices. This paper outlines a study to validate and improve upon the Non-Ionising Energy Loss (NIEL) model for high energy electrons in silicon using Charge Coupled Devices (CCD), CMOS Imaging Sensors (CIS) and PIPS photodiodes. Initial results of radiation effects in an e2v technologies CCD47-20 after irradiation to 10 krad of 1 MeV electrons are presented with future results and analysis to be presented in future publications.

Mots clés: CCD; NIEL; NON-IONISING ENERGY LOSS; RADIATION EFFECTS; ELECTRON; SILICON; PROTON; GAMMA

Domaines: Physique de l'espace [physics.space-ph]

B. Dryer, P.H. Smith, B. Nuns, N.J. Murray, K.D. Stefanov, et al.. Validation of NIEL for >1 MeV electrons in silicon using the CCD47-20. High Energy, Optical, and Infrared Detectors for Astronomy VII, 9915, 9 p., 2016, ⟨10.1117/12.2233975⟩. ⟨hal-01464791⟩