Mid-Infrared HgTe/As 2 S 3 Field Effect Transistors and Photodetectors

Emmanuel Lhuillier (1) , Sean Keuleyan (2) , Pavlo Zolotavin , Philippe Guyot-Sionnest (1)

1 James Franck Institute
2 University of Oregon [Eugene]

Colloidal quantum dots (CQDs) with mid-infrared (IR) tunable bandgaps present a new paradigm for mid-IR materials, but advances in charge transport and collection are needed for practical use in electronic applications. By replacing the organic ligands in films of HgTe CQDs with As 2 S 3 , a problem of oxidation in air is avoided and charge carrier mobilities are improved 100 fold compared to the standard organic ligand exchange. The composite inorganic HgTe/As 2 S 3 material allows for ambipolar field effect transistors with on-off ratios up to 10 7 , and photodetectors with high sensitivity, reaching 3x10 10 Jones at 230 K with a 3.5 micron cutoff wavelength.

Mots clés: HgTe; As 2 S 3; colloidal quantum dot; inorganic matrix; FET; mid-IR; photodetection

Domaines: Matière Condensée [cond-mat]; Matériaux

Emmanuel Lhuillier, Sean Keuleyan, Pavlo Zolotavin, Philippe Guyot-Sionnest. Mid-Infrared HgTe/As 2 S 3 Field Effect Transistors and Photodetectors. Advanced Materials, 2013, 25 (1), pp.137 - 141. ⟨10.1002/adma.201203012⟩. ⟨hal-01438562⟩