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Two carrier band transport in InP:Fe under single beam illumination

Abstract : Indium Phosphide is a material of primary relevance in the field of opto-electronics since it supersedes conventional materials such as AsGa for electron mobility and heat conduction for instance. It is often doped with iron to reduce its conductivity and enhance its light dependent conduction properties.Indium Phosphide is well known for its two carrier band transport conduction mechanism, where both electrons and holes play a significant role. Its transport mechanisms have been heavily investigated, especially in the dark. Light induced charge transport, on the contrary, has beeninvestigated at the end of the XX th century as far as periodic illumination stemming from beam interference is concerned. More recently, non periodic illumination was tackled. Both have shown the existence of a particular intensity, named the resonance intensity, at which charge transportis enhanced and around which it changes behavior. Both have in common the small modulation hypothesis where ligh intensity is assumed not to deviate too far from its mean value. InP:Fe being a electro-optic material, this resonance mechanism has been shown to be at the heartof a light induced refractive index modulation, leading to light self-focusing. However, a one beam illumination is far from the small modulation hypothesis. Experiments indeed show that the very notion of resonance intensity no longer holds. They also show a behavior-reversal intensity. Itsvalue is different from that of the resonance intensity, but remains to be explained. We attempt here a theoretical study of the two carrier band transport model in InP:Fe, in the simplifying framework of one single space dimension alongside the time dimension. Our originalapproach is to rule out all conventional approximations, aiming to justify each of them mathematically with precise numerical values. Once this is done, we go on to a simplified model of two carrier transport in InP:Fe, for which basic simulation will be undertook and checked against experimentalresults. The mathematical method undertook here is know as multi-scale modeling. It is needed because of the presence of largely varying orders of magnitudes in the parameters of the two carrier band transport model.
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Contributor : Nicolas Fressengeas <>
Submitted on : Thursday, November 20, 2014 - 11:04:13 AM
Last modification on : Wednesday, April 8, 2020 - 3:17:12 PM
Long-term archiving on: : Monday, February 23, 2015 - 8:47:01 AM


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  • HAL Id : hal-01084840, version 1


Nicolas Fressengeas, Miscoci Andreea. Two carrier band transport in InP:Fe under single beam illumination. China-France Workshop on Advanced Materials, Wuhan University of Technology, Nov 2014, Wuhan, China. ⟨hal-01084840⟩



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