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Characterization of an integrated buck converter using infrared thermography

Abstract : This study deals with new integrated systems for power electronics applications including wide-gap semiconductors. Integration of Silicon carbide (SiC) components provides for instance new perspectives with higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. By means of infrared thermography, an analysis of the thermal disparities induced within such a hybrid assembly under various electrical loads is proposed, regarding especially the consequences of the electrical power transfer and the spatial distribution of the thermal field.
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Submitted on : Thursday, August 28, 2014 - 3:24:03 PM
Last modification on : Thursday, September 4, 2014 - 10:31:02 AM
Long-term archiving on: : Saturday, November 29, 2014 - 10:40:21 AM


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  • HAL Id : hal-01058899, version 1
  • OATAO : 11877


Noelle Viviès, Marion Haussener, Hélène Welemane, Baptiste Trajin, Paul-Etienne Vidal. Characterization of an integrated buck converter using infrared thermography. Quantitative InfraRed Thermography (QIRT) conference, Jul 2014, Bordeaux, France. ⟨hal-01058899⟩



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