C. Berger, Ultrathin Epitaxial Graphite:?? 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics, The Journal of Physical Chemistry B, vol.108, issue.52, pp.19912-19916, 2004.
DOI : 10.1021/jp040650f

M. Y. Han, J. C. Brant, and P. Kim, Electron Transport in Disordered Graphene Nanoribbons, Physical Review Letters, vol.104, issue.5, p.56801, 2010.
DOI : 10.1103/PhysRevLett.104.056801

L. Tapasztó, G. Dobrik, P. Lambin, and L. P. Biró, Tailoring the atomic structure of graphene nanoribbons by scanning tunnelling microscope lithography, Nature Nanotechnology, vol.68, issue.7, pp.397-401, 2008.
DOI : 10.1038/nnano.2008.149

L. Jiao, L. Zhang, X. Wang, G. Diankov, and H. Dai, Narrow graphene nanoribbons from carbon nanotubes, Nature, vol.78, issue.7240, pp.877-880, 2009.
DOI : 10.1038/nature07919

C. Berger, Electronic Confinement and Coherence in Patterned Epitaxial Graphene, Science, vol.312, issue.5777, pp.1191-1196, 2006.
DOI : 10.1126/science.1125925

W. A. Heer, Epitaxial graphene, Solid State Communications, vol.143, issue.1-2, pp.92-100, 2007.
DOI : 10.1016/j.ssc.2007.04.023
URL : https://hal.archives-ouvertes.fr/hal-00911214

M. Orlita, Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene, Physical Review Letters, vol.101, issue.26, p.267601, 2008.
DOI : 10.1103/PhysRevLett.101.267601
URL : https://hal.archives-ouvertes.fr/hal-00413943

J. Kedzierski, Epitaxial Graphene Transistors on SiC Substrates, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.2078-2085, 2008.
DOI : 10.1109/TED.2008.926593

X. Li, Top- and side-gated epitaxial graphene field effect transistors, physica status solidi (a), vol.30, issue.2, pp.286-290, 2010.
DOI : 10.1002/pssa.200982453

M. Sprinkle, First Direct Observation of a Nearly Ideal Graphene Band Structure, Physical Review Letters, vol.103, issue.22, p.226803, 2009.
DOI : 10.1103/PhysRevLett.103.226803
URL : https://hal.archives-ouvertes.fr/hal-01002913

J. Moon, Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates, IEEE Electron Device Letters, vol.30, issue.6, pp.650-652, 2009.
DOI : 10.1109/LED.2009.2020699

Y. Lin, 100-GHz Transistors from Wafer-Scale Epitaxial Graphene, Science, vol.327, issue.5966, p.662, 2010.
DOI : 10.1126/science.1184289

X. S. Wu, Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene Electronics, Physical Review Letters, vol.101, issue.2, p.26801, 2008.
DOI : 10.1103/PhysRevLett.101.026801

E. Bekyarova, Chemical Modification of Epitaxial Graphene: Spontaneous Grafting of Aryl Groups, Journal of the American Chemical Society, vol.131, issue.4, pp.1336-1337, 2009.
DOI : 10.1021/ja8057327

K. 15-nakada, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Edge state in graphene ribbons: Nanometer size effect and edge shape dependence, Physical Review B, vol.54, issue.24, pp.17954-17961, 1996.
DOI : 10.1103/PhysRevB.54.17954

J. Hass, W. A. De-heer, and E. H. Conrad, The growth and morphology of epitaxial multilayer graphene, Journal of Physics: Condensed Matter, vol.20, issue.32, p.323202, 2008.
DOI : 10.1088/0953-8984/20/32/323202

K. V. Emtsev, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Materials, vol.600, issue.3, pp.203-207, 2009.
DOI : 10.1038/nmat2382

C. Virojanadara, Substrate orientation: A way towards higher quality monolayer graphene growth on 6H-SiC(0001), Surface Science, vol.603, issue.15, pp.87-90, 2009.
DOI : 10.1016/j.susc.2009.05.005

J. Robinson, Nucleation of Epitaxial Graphene on SiC(0001), ACS Nano, vol.4, issue.1, pp.153-158, 2010.
DOI : 10.1021/nn901248j

J. R. Hass, Structural characterization of epitaxial graphene on silicon carbide, 2008.

X. Wu, Half integer quantum Hall effect in high mobility single layer epitaxial graphene, Applied Physics Letters, vol.95, issue.22
DOI : 10.1063/1.3266524
URL : https://hal.archives-ouvertes.fr/hal-01002933

H. S. Kong, J. T. Glass, and R. F. Davis, Chemical vapor deposition and characterization of 6H???SiC thin films on off???axis 6H???SiC substrates, Journal of Applied Physics, vol.64, issue.5, pp.2672-2679, 1988.
DOI : 10.1063/1.341608

M. Syväjärvi, R. Yakimova, and E. Janzn, Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature, Journal of Crystal Growth, vol.236, issue.1-3, pp.297-304, 2002.
DOI : 10.1016/S0022-0248(01)02331-4

A. Nakajima, H. Yokoya, Y. Furukawa, and H. Yonezu, Step control of vicinal 6H???SiC(0001) surface by H2 etching, Journal of Applied Physics, vol.97, issue.10, p.104919, 2005.
DOI : 10.1063/1.1901838

S. Nie, Step formation on hydrogen-etched 6H-SiC{0001} surfaces, Surface Science, vol.602, issue.17, pp.2936-2942, 2008.
DOI : 10.1016/j.susc.2008.07.021

V. Borovikov and A. Zangwill, surfaces, Physical Review B, vol.79, issue.24, p.245413, 2009.
DOI : 10.1103/PhysRevB.79.245413

H. 27-nakagawa, S. Tanaka, and I. Suemune, Self-Ordering of Nanofacets on Vicinal SiC Surfaces, Physical Review Letters, vol.91, issue.22, p.226107, 2003.
DOI : 10.1103/PhysRevLett.91.226107

S. Tanaka, K. Morita, and H. Hibino, Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces, Physical Review B, vol.81, issue.4, p.41406, 2010.
DOI : 10.1103/PhysRevB.81.041406

J. R. Williams, L. Dicarlo, and C. M. Marcus, Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene, Science, vol.317, issue.5838, pp.638-641, 2007.
DOI : 10.1126/science.1144657

D. B. Farmer, Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors, Nano Letters, vol.9, issue.12, pp.4474-4478, 2009.
DOI : 10.1021/nl902788u