Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Xiaosong Wu (1) , Yike Hu (1) , Ming Ruan (1) , Nerasoa K. Madiomanana (1) , John H. Hankinson (1) , Mike Sprinkle (1) , Claire Berger (2) , Walt. A. de Heer (1)

1 School of Physics
2 NEEL - QuantECA - Circuits électroniques quantiques Alpes

The quantum Hall effect, with a Berry's phase of π is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is ~20 000 cm2 / V* s at 4 K and 15 000 cm2 / V* s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO2 and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.

Mots clés: graphene; epitaxial graphene; SiC; quantum Hall effect; electronic transport

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Xiaosong Wu, Yike Hu, Ming Ruan, Nerasoa K. Madiomanana, John H. Hankinson, et al.. Half integer quantum Hall effect in high mobility single layer epitaxial graphene. Applied Physics Letters, 2009, 95 (22), pp.223108. ⟨10.1063/1.3266524⟩. ⟨hal-01002933⟩