Statistical analyses of repolarisation current of a PZT film deposited on ITO electrode with different thermal treatments

Salvatore Marino (1) , Andrei Th Ionescu (2) , Anca-Luiza Alexe-Ionescu (3) , Gaetano Nicastro (1) , Giuseppe Strangi (1) , Nicola Scaramuzza (4)

1 department of physics
2 Facultatea de Fizica
3 Faculatea de Stiinte Aplicate
4 CNR-IPCF - Department of Physics

In the vast application fields of PZT (lead zirconium titanate) thin films, of particular interest are the interaction effects occurring at the ferroelectric - substrate interface [1,2]. Relevant for this purpose are polarity sensitive liquid crystals (LC) cells, micro and nano-electronic applications [3]. In the present work the polarization current of a PZT film (PbZr0,47Ti0,53O3), obtained by sol-gel synthesis and deposited by spin coating on ITO (indium tin oxide) electrode, has been studied. The different behaviour showed by such a system when the support electrode is previously submitted to a thermal treatment could be attributed to the change of the electrical properties of the ITO layer. In particular, a higher negative charge in the conductive band of the ITO electrode seems to be responsible of a higher order in the ferroelectric film.

Mots clés: Physical Sciences

Salvatore Marino, Andrei Th Ionescu, Anca-Luiza Alexe-Ionescu, Gaetano Nicastro, Giuseppe Strangi, et al.. Statistical analyses of repolarisation current of a PZT film deposited on ITO electrode with different thermal treatments. Philosophical Magazine, 2010, 90 (12), pp.1575-1584. ⟨10.1080/14786430903419091⟩. ⟨hal-00587608⟩