An Efficient BICS Design for SEUs Detection and Correction in Semiconductor Memories
Résumé
In this paper we propose a new Built in Current Sensor (BICS) to detect single event upsets in SRAM. The BICS is designed and validated for 100nm process technology. The BICS reliability analysis for process, voltage, temperature, and power supply noise are provided. This BICS detect various shapes of current pulses generated due to particle strike. The BICS power consumption and area overhead are also provided. This BICS found to be very reliable for process, voltage and temperature variation and under stringent noise conditions.
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