Modelling of millimeter wave two terminal devices and related circuits

Paul-Alain Rolland (1) , Marie-Renée Friscourt (1) , Didier Lippens (1) , Christophe Dalle (1) , Marion Berbineau (1) , Nathalie Rolland (1)

1 INRETS/LEOST - Laboratoire Electronique, Ondes et Signaux pour les Transports

The authors describe a self-consistent modeling of millimeter-wave diodes (GUNN, IMPATT, and p-i-n) for applications such as power sources or limiters. Particular emphasis is placed on temperature rise within the devices to achieve reliable high-power operation. Circuit loading is also considered for a more realistic description of the operating mode. The proposed CAD (computer-aided design) technique has proved to be an efficient tool leading to the design and realization of high-power high-efficiency W-band sources operating at safe temperature rise

Mots clés: Millimeter wave circuits; Millimeter wave devices; Semiconductor diodes; Temperature; Semiconductor materials; Frequency; Impedance; Waveguide transitions; Packaging; Gunn devices

Domaines: Sciences de l'ingénieur [physics]

Paul-Alain Rolland, Marie-Renée Friscourt, Didier Lippens, Christophe Dalle, Marion Berbineau, et al.. Modelling of millimeter wave two terminal devices and related circuits. IEEE International Symposium on Circuits and Systems, Jun 1988, Espoo, Finland. ⟨10.1109/ISCAS.1988.15402⟩. ⟨hal-00005288⟩