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Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

Abstract : We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon- on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1–1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.
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Submitted on : Monday, March 8, 2021 - 11:54:56 AM
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Durand et al. - 2020 - Broad d...
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Alrik Durand, Yoann Baron, Walid Redjem, T. Herzig, A. Benali, et al.. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon. Physical Review Letters, American Physical Society, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩. ⟨hal-03162094⟩



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