Electrical transport properties of p-type 4H-SiC

Abstract : The Hall hole density pH and Hall mobility µH in highly aluminum-doped 4H-SiC have been investi-gated in the wide temperature range between 100 K and 900 K. After an overview of the literature data related to the analysis of electrical transport experiments, a model taking into account the two upper-most valence bands of heavy and lights holes, one single acceptor energy EA and the empirical Hall factor rHexp has been discussed in details. The limits of the applied model as a function of temperature and acceptor concentration have been considered. For each analyzed sample, the acceptor density NA and the compensation ratio ND/NA have been experimentally assessed by capacitance-voltage and secondary ion mass spectroscopy measurements. Finally, the Hall carrier concentration vs doping level NA-ND as well as ionization energy of acceptor EA vs acceptor concentration NA in 4H-SiC have been discussed.
Type de document :
Article dans une revue
physica status solidi (a), Wiley, 2017, 214 (4), pp.1600679. 〈10.1002/pssa.201600679〉
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Soumis le : vendredi 16 juin 2017 - 17:30:32
Dernière modification le : jeudi 18 janvier 2018 - 11:30:04




Sylvie Contreras, Leszek Konczewicz, Roxana Arvinte, Herve Peyre, Thierry Chassagne, et al.. Electrical transport properties of p-type 4H-SiC. physica status solidi (a), Wiley, 2017, 214 (4), pp.1600679. 〈10.1002/pssa.201600679〉. 〈hal-01540938〉



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