Polyx multicrystalline silicon solar cells processed by PF+ 5 unanalysed ion implantation and rapid thermal annealing
Résumé
Rapid thermal annealing of damage induced by implantation in silicon can be a cost effective technology for the processing of terrestrial solar cells as compared to classical furnace or pulsed laser annealing. Unfortunately, drawbacks as poor bulk lifetime or low open-circuit-voltage occur as well. We have attempted to overcome these limitations for POLYX multicrystalline cast silicon grown by CGE (France) by keeping the annealing temperature of the phosphorus doped layer as high as 800 °C (to ensure a good crystalline quality and a high dopant activation) while being less than 900 °C (to minimize the effect of degradation of the base properties). The purpose of the present work is to investigate the I-V characteristics of the cells and to compare to those obtained with classical furnace annealing or with classical diffusion process.
Mots clés
annealing
elemental semiconductors
ion implantation
semiconductor doping
silicon
solar cells
semiconductor
POLYX multicrystalline silicon solar cells
rapid thermal annealing
terrestrial solar cells
bulk lifetime
low open circuit voltage
annealing temperature
high dopant activation
I V characteristics
800 to 900 degC
Si:PF sub 5 sup +
PF sub 5 sup
unanalysed ion implantation
Domaines
Articles anciens
Origine : Accord explicite pour ce dépôt
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