Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys

A.M. Lamoise (1) , J. Chaumont (1) , F. Lalu (1) , Frédéric Meunier (2) , H. Bernas (3)

1 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
2 LPS - Laboratoire de Physique des Solides
3 IPNO - Institut de Physique Nucléaire d'Orsay

Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si). The latter value is the highest yet obtained for an Al-based alloy. All these values are obtained for covalent element concentrations of ∼ 25 %. The effect of lattice disorder is not found sufficient to account for the observed Tc enhancements.

Mots clés: aluminium alloys; germanium alloys; ion implantation; silicon alloys; superconducting thin films; superconducting transition temperature; type II superconductors; superconducting transition temperatures; lattice disorder; ion implanted alloys; Al C alloy; Al Ge alloy; Al Si alloy

Domaines: Articles anciens; Instrumentations et Détecteurs [physics.ins-det]

A.M. Lamoise, J. Chaumont, F. Lalu, Frédéric Meunier, H. Bernas. Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys. Journal de Physique Lettres, 1976, 37 (11), pp.287-289. ⟨10.1051/jphyslet:019760037011028700⟩. ⟨jpa-00231294⟩