SPECIFIC CONTRIBUTIONS OF SIMS AND XPS TO STUDIES OF THERMAL OXIDE FILM

J.C. Pivin (1) , D. Loison

1 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

SIMS give specific informations on the diffusion of a tracer in growing oxide films and the depth distribution of impurities in low concentrations in the films. The valency of these dopants can be determined by XPS, thus permitting to explain their influence on diffusion processes.

Domaines: Articles anciens

J.C. Pivin, D. Loison. SPECIFIC CONTRIBUTIONS OF SIMS AND XPS TO STUDIES OF THERMAL OXIDE FILM. 10th International Congress on X-Ray Optics and Microanalysis, 1983, Toulouse, France. pp.C2-647-C2-652, ⟨10.1051/jphyscol:19842151⟩. ⟨jpa-00223823⟩