Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs

T. Cabout (1, 2) , L. Perniola (2) , V. Jousseaume (2) , H. Grampeix (2) , J.F. Nodin (2) , A. Toffoli (2) , M. Guillermet (2) , E. Jalaguier (2) , E. Vianello (2) , G. Molas (2) , G. Reimbold (2) , B. de Salvo (2) , T. Diokh (3) , P. Candelier (3) , O. Pirrotta (4) , A. Padovani (4) , L. Larcher (4) , Marc Bocquet (1) , Christophe Muller (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 ST-CROLLES - STMicroelectronics [Crolles]
4 UNIMORE - Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia

This paper provides an overview of the temperature impact (up to 200 °C) on the electrical behavior of oxide-based RRAM, during forming, low-field resistance reading, SET/RESET, disturb, data retention and endurance. HfO 2-RRAM devices (in a 1T1R configuration) integrated in an advanced 65 nm technology are studied for this aim. We show that forming operation is strongly activated in temperature (i.e.-0.5 V per hundred Celsius degree), being much less for SET and RESET voltages (i.e. <-0.05 V per hundred Celsius degree); disturb of HRS at fixed voltage showed to be independent of temperature; endurance up to 3.10 6 cycles, with optimized set of stress parameters showed no significant variation; data retention at 150 °C up to 68 days showed stable programming window, after different initial programming algorithms.

Mots clés: bipolar operation; endurance; data retention; Resistive-switching random access memory (RRAM)

Domaines: Micro et nanotechnologies/Microélectronique

T. Cabout, L. Perniola, V. Jousseaume, H. Grampeix, J.F. Nodin, et al.. Temperature impact (up to 200°C) on performance and reliability of HfO2-based RRAMs. 2013 5th IEEE International Memory Workshop (IMW), May 2013, Monterey, United States. ⟨10.1109/IMW.2013.6582112⟩. ⟨hal-01738426⟩