Power Loss Estimation in SiC Power BJTs

Chen Cheng (1) , Denis Labrousse (1) , Stéphane Lefebvre (1) , Hervé Morel (2) , Cyril Buttay (2) , Julien André (3) , Martin Domeij (4)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 EE - Ampère, Département Energie Electrique
3 Fairchild Semiconductor France
4 Fairchild Semiconductor AB

Silicon Carbide (SiC) Bipolar Junction Transistors (BJTs) are promising power devices for high power and high temperature applications. For the improvement of transient speeds, effect of the driver base capacitor and anti-saturation diode are studied. To outline their switching performances, SiC BJTs with a blocking voltage of 1200 V are characterized under different base and load currents. Switching speeds and losses are investigated for temperature as high as 200°C.

Domaines: Energie électrique

Chen Cheng, Denis Labrousse, Stéphane Lefebvre, Hervé Morel, Cyril Buttay, et al.. Power Loss Estimation in SiC Power BJTs. PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p. ⟨hal-00997718⟩