Low temperature noise spectroscopy of p-channel SOI FinFETs

H. Achour (1, 2) , Bogdan Cretu (1) , E. Simoen (3) , Jean-Marc Routoure (1) , Régis Carin (1) , Rachida Talmat (1) , A. Benfdila (2) , M. Aoulaiche (3) , C. Claeys (3, 4)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

The aim of this study is to use the excess low frequency noise versus the temperature in order to characterize the traps in the depleted silicon film of p-channel FinFETs on standard and strained substrates. An important number of identified traps related to boron and carbon can be observed, in particular for the strained substrate devices.

Domaines: Sciences de l'ingénieur [physics]; Electronique

H. Achour, Bogdan Cretu, E. Simoen, Jean-Marc Routoure, Régis Carin, et al.. Low temperature noise spectroscopy of p-channel SOI FinFETs. 10th Workshop of the Thematic Network on SOI Technology, Devices and Circuits, Jan 2014, tarragona, Spain. 2 p. in USB Key. ⟨hal-00994397⟩