DC and noise performances of SOI FinFETs at very low temperature

H. Achour (1, 2) , Rachida Talmat (1, 2) , Bogdan Cretu (2) , Jean-Marc Routoure (2) , A. Benfdila (1) , Régis Carin (2) , N. Collaert (3) , E. Simoen (3) , A. Mercha (3) , C. Claeys (3, 4)

1 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
2 Equipe Electronique - Laboratoire GREYC - UMR6072
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

In this work, DC and noise measurements in strained and unstrained SOI FinFET were performed in order to evaluate the device performances at cryogenic temperatures (10 K). The main electrical parameters (threshold voltage, subthreshold swing, mobility, etc...) are investigated. The study of the low frequency noise clearly shows that the 1/f noise is governed by the carrier number fluctuations even at cryogenic temperatures for p-channel devices

Domaines: Sciences de l'ingénieur [physics]; Electronique

H. Achour, Rachida Talmat, Bogdan Cretu, Jean-Marc Routoure, A. Benfdila, et al.. DC and noise performances of SOI FinFETs at very low temperature. 8th Workshop of the Thematic Network on SOI Technology, Devices and Circuits, Jan 2012, Montpellier, France. 2p. ⟨hal-00994391⟩