In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature

H. Achour (1, 2) , Bogdan Cretu (2) , Jean-Marc Routoure (2) , Régis Carin (2) , Rachida Talmat (1, 2) , A. Benfdila (1) , E. Simoen (3) , C. Claeys (3, 4)

1 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
2 Equipe Electronique - Laboratoire GREYC - UMR6072
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

The impact of cryogenic temperature operation (10 K) on the short channel effects and low frequency noise was analysed on strained and unstrained n-channel FinFET transistors fabricated on silicon on insulator (SOI) substrates in order to evaluate the devices static performances and to study the low frequency noise mechanisms. The main electrical parameters are investigated and it is evidenced that even at very low temperatures, the strain-engineering techniques boost the devices performances in terms of mobility, threshold voltage, access resistances and drain saturation currents. The DIBL effect, Early voltage and the intrinsic gain are ameliorated only for the short channel devices. A drawback, however, is that slightly improved turn-on capabilities may be noted for standard channel devices compared to strained ones. Low frequency noise measurements show that the carrier number fluctuations dominate the flicker noise in weak inversion even at 10 K operation. Access resistance noise contributions were evidenced in strong inversion.

Mots clés: Low frequency noise; Analog parameters; Short channel effects; Very low temperature; Strain; SOI FinFET

Domaines: Sciences de l'ingénieur [physics]; Electronique

H. Achour, Bogdan Cretu, Jean-Marc Routoure, Régis Carin, Rachida Talmat, et al.. In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature. Solid-State Electronics, 2014, 8 p. ⟨hal-00994380⟩