Detailled characterisation of SOI n-FinFETs at very low temperature

H. Achour (1, 2) , Bogdan Cretu (2) , Jean-Marc Routoure (2) , Régis Carin (2) , Rachida Talmat (2) , A. Benfdila (1) , E. Simoen (3) , C. Claeys (3, 4)

1 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
2 Equipe Electronique - Laboratoire GREYC - UMR6072
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

DC and low frequency noise measurements on strained and unstrained n-channel FinFET transistors processed on silicon on insulator (SOI) substrates were performed at 10 K in order to evaluate the device performances and study the low frequency noise mechanisms. The main electrical parameters are investigated and compared to those found at room temperature. The low frequency noise analysis shows that at 10 K, the carrier number fluctuations dominate the flicker noise in weak inversion, while the access resistance noise contributions prevails in strong inversion.

Mots clés: FinFET; DC performances; low frequency noise; very low temperature operation

Domaines: Sciences de l'ingénieur [physics]; Electronique

H. Achour, Bogdan Cretu, Jean-Marc Routoure, Régis Carin, Rachida Talmat, et al.. Detailled characterisation of SOI n-FinFETs at very low temperature. International Conference on Ultimate Integration on Silicon (ULIS), Mar 2013, Coventry, United Kingdom. 4 p. ⟨hal-00994224⟩