On the Variability and Front-Back Coupling of the Low-frequency Noise in UTBOX SOI nMOSFETs

S.D. dos Santos (1, 2, 3) , E. Simoen (1) , V. Strobel (1, 4) , Bogdan Cretu (5) , Jean-Marc Routoure (5) , Régis Carin (5) , M. Aoulaiche (1) , M. Jurczak (1) , J.A. Martino (2) , C. Claeys (1, 3)

1 IMEC - IMEC
2 LSI/PSI/USP - University of Sao Paulo - Brazil
3 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium
4 GREYC - Groupe de Recherche en Informatique, Image et Instrumentation de Caen
5 Equipe Electronique - Laboratoire GREYC - UMR6072

A low-frequency (LF) noise characterization of UTBOX SOI nMOSFETs is undertaken in order to understand the variation of the electron mobility in the front-channel. It is shown that there exists a reasonable correlation between the two parameters, which can be explained by Coulomb scattering at charged traps in the front and back-gate oxide. Exceptions to the observed trend are related to the presence of excess Generation- Recombination (GR) noise, associated with deep levels in the thin Si film.

Domaines: Sciences de l'ingénieur [physics]; Electronique

S.D. dos Santos, E. Simoen, V. Strobel, Bogdan Cretu, Jean-Marc Routoure, et al.. On the Variability and Front-Back Coupling of the Low-frequency Noise in UTBOX SOI nMOSFETs. IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Oct 2012, xian, China. 3 p. ⟨hal-00994176⟩