Low Frequency Noise Spectroscopy in Advanced nFinFETS

Rachida Talmat (1, 2) , H. Achour (1, 2) , Bogdan Cretu (2) , Jean-Marc Routoure (2) , A. Benfdila (1) , Régis Carin (2) , N. Collaert (3) , A. Mercha (3) , E. Simoen (3) , C. Claeys (3, 4)

1 UMMTO - Université Mouloud Mammeri [Tizi Ouzou]
2 Equipe Electronique - Laboratoire GREYC - UMR6072
3 IMEC - IMEC
4 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

In this paper, the low frequency noise is studied from 100 K to room temperature in n-channel triple-gate FinFET transistors with 25 nm fin-width and 65 nm fin-height, a high-k dielectric, metal gate and strained and unstrained substrates. These investigations allow to identify defects in the silicon film and to make a correlation with some technological steps.

Domaines: Sciences de l'ingénieur [physics]; Electronique

Rachida Talmat, H. Achour, Bogdan Cretu, Jean-Marc Routoure, A. Benfdila, et al.. Low Frequency Noise Spectroscopy in Advanced nFinFETS. Seventh Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits, Jan 2011, Grenade, Spain. pp55-56. ⟨hal-00994154⟩