Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures

Jessica Bousquet (1) , Gauthier Chicot (1) , David Eon (1) , Etienne Bustarret (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite

The optimization of diamond-based unipolar electronic devices such as pseudo-vertical Schottky diodes or delta-doped field effect transistors relies in part on the sequential growth of nominally undoped (p-) and heavily boron doped (p þþ ) layers with well-controlled thicknesses and steep interfaces. Optical ellipsometry offers a swift and contactless method to characterize the thickness, roughness, and electronic properties of semiconducting and metallic diamond layers. We report ellipsometric studies carried out on delta-doped structures and other epitaxial multilayers with various boron concentrations and thicknesses (down to the nanometer range). The results are compared with Secondary Ion Mass Spectroscopy and transport measurements. Copyright 2014 AIP Publishing LLC.

Mots clés: diamant; dopage; ellipsométrie; multi-couches; semi-conducteurs élémentaires; épitaxie

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Sciences de l'ingénieur [physics]

Jessica Bousquet, Gauthier Chicot, David Eon, Etienne Bustarret. Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures. Applied Physics Letters, 2014, 104 (2), pp.021905. ⟨10.1063/1.4861860⟩. ⟨hal-00932150⟩