High conductivity in Si-doped GaN wires

Pierre Tchoulfian (1) , Fabrice Donatini (2) , François Levy (3) , Benoît Amstatt (3) , Pierre Ferret (3) , Julien Pernot (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 NEEL - POM - Optique & Microscopies
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Temperature-dependent resistivity measurements have been performed on single Si-doped GaN microwires grown by catalyst-free metal-organic vapour phase epitaxy. Metal-like conduction is observed from four-probe measurements without any temperature dependence between 10 K and 300 K. Radius-dependent resistivity measurements yield resistivity values as low as 0.37 mohm.cm. This is in agreement with the full width at half maximum (170 meV) of the near band edge luminescence obtained from low temperature cathodoluminescence study. Higher dopant incorporation during wire growth as compared to conventional epitaxial planar case is suggested to beresponsiblefortheuniqueconductivity.

Mots clés: GaN; wires

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Tchoulfian, Fabrice Donatini, François Levy, Benoît Amstatt, Pierre Ferret, et al.. High conductivity in Si-doped GaN wires. Applied Physics Letters, 2013, 102, pp.122116. ⟨10.1063/1.4799167⟩. ⟨hal-00843632⟩