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DOI : 10.1002/pssa.201100038

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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 208, 9 (2011) 2057-2061

Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes

Thu Nhi Tran Thi 1, Bruno Fernandez 1, David Eon 1, Etienne Gheeraert 1, Juergen Haertwig 2, T. Lafford 2, A. Perrat-Mabilon 3, C. Peaucelle 3, P. Olivero 4, Etienne Bustarret 1

(09/2011)

A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation of a regular (4 nm roughness) Ib diamond plate. This was then graphitized by annealing before being selectively etched. We have used O(+) at 240 keV, the main process variables being the ion fluence (ranging from 3 x 10(15) to 3 x 10(17)cm(-2)) and the final etching process (wet etch, H(2) plasma, and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O(+) fluence of 2 x 10(17)cm(-2) was found to result in sub-nanometer roughness over tens of mu m(2).

1 :	Institut Néel (NEEL)
	CNRS : UPR2940 – Université Joseph Fourier - Grenoble I – Institut National Polytechnique de Grenoble (INPG)
2 :	European Synchrotron Radiation Facility (ESRF)
	ESRF
3 :	Institut de Physique Nucléaire de Lyon (IPNL)
	CNRS : UMR5822 – IN2P3 – Université Claude Bernard - Lyon I
4 :	Faculty of Mathematics, Physics and Natural Sciences
	University of Torino

Équipe de recherche : NanoFab SC2G

Domaine

:

Sciences de l'ingénieur/Génie des procédés

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Contributeur : David Eon <>

Soumis le : Jeudi 11 Octobre 2012, 12:52:24

Dernière modification le : Jeudi 11 Octobre 2012, 13:14:50