Investigation of the interaction between hydrogen and screw dislocation in silicon by first principles calculations
Résumé
The stability of atomic and molecular hydrogen in the vicinity of a screw dislocation in silicon has been investigated using first-principles calculations. Lowest energy configurations are obtained for H atoms located into the dislocation core, suggesting that the segregation of hydrogen is favoured into the dislocation core. It is found that a spontaneous dissociation of H$_2$ could occur in the dislocation core. Finally, the variation of the interaction energy between hydrogen and the dislocation core as a function of the separating distance has been calculated. There is no sizeable interaction variation for H$_2$. However, in the case of a single H, an inverse law has been obtained which can be explained by the anisotropic stress field generated by the insertion of H in the silicon lattice.
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