Transport Critical Current in MOCVD YBa2Cu307 thin films using a pulse technique

Eric Mossang , F. Weiss (1) , G. Delabouglise (1) , Oleg Lebedev (1) , J.P. Senateur (1) , Olivier Thomas (1) , K. Fröhlich (2)

1 LMGP - Laboratoire des matériaux et du génie physique
2 IEE - Institute of Electrical Engineering

Transport currents in epitaxial thin layers of YBa2Cu307 have been measured by a pulse technique which avoids heating at the contacts. We give a complete description of the experimental set up, which allows the measurement of critical currents as a function of temperature, applied field and angle. Thin films have been obtained by Metalorganic Chemical Vapor Deposition on different kinds of substrates: (100) SrTiO 3 and (100) MgO. These films have been patterned by chemical etching and bridges of typically 100pro width have been obtained. The microbridges for I-V measurements can be as wide as 100p.m since the contact heating during critical current measurements is considerably reduced in the pulse method and large current intensities (1A and over) can be used without damage. Typical results of Jc(T, H) and of critical current anisotropy will be given for selected MOCVD samples.

Domaines: Supraconductivité [cond-mat.supr-con]

Eric Mossang, F. Weiss, G. Delabouglise, Oleg Lebedev, J.P. Senateur, et al.. Transport Critical Current in MOCVD YBa2Cu307 thin films using a pulse technique. Journal of Alloys and Compounds, 1993, 195, pp.475-478. ⟨hal-00720274⟩