High-temperature die-attaches for SiC power devices
Résumé
SiC devices have been substituted to Si dies for high temperature applications. However, classical packagings are not adapted for harsh environment and new solutions for back-side die attach must be envisaged. In this paper, theoretical basis and results for nano-silver sintering Transient Liquid Phase Bonding will be presented.
Origine : Fichiers produits par l'(les) auteur(s)
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