Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout

Nestor Berbel (1) , Raul Fernandez-Garcia (1) , Ignacio Gil (1) , Binhong Li (2) , Alexandre Boyer (3) , Sonia Ben Dhia (3)

1 UPC - Universitat Politècnica de Catalunya = Université polytechnique de Catalogne [Barcelona]
2 LATTIS - Laboratoire Toulousain de Technologie et d'Ingénierie des Systèmes
3 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

In this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated. In order to do that, three types of nFET transistors have been analyzed under different HCI conditions and the nth power law MOSFET model has been extracted for each sample. The results show that the model can reproduce the MOSFET behavior under HCI wearout mechanism. Therefore, the impact of HCI on circuits can be analyzed by using the nth power law MOSFET model.

Mots clés: Nth power law model; hot carrier injection; MOSFET model

Domaines: Electronique

Nestor Berbel, Raul Fernandez-Garcia, Ignacio Gil, Binhong Li, Alexandre Boyer, et al.. Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout. Microelectronics Reliability, 2011, 51 (9), pp.1564. ⟨hal-00669511⟩