High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(111) heterostructures

P Zaumseil (1) , L Tarnawska (1) , P Storck (2) , T Schroeder (1)

1 IHP - Institut Henri Poincaré
2 SILTRONIC AG

The thermal behavior of GaN epitaxially grown on a Sc 2 O 3 /Y 2 O 3 bilayer buffer on Si(111) substrate is studied between room temperature (RT) and 800°C by X-ray diffraction of symmetrical and asymmetrical reflections. It is found that the GaN layer is inplane mediated by the oxide buffer completely fixed to the Si substrate, which indicates the absence of any temperature related compliance behavior of the oxide buffer. The GaN grows at 720°C already slightly tensile strained on top of the larger Sc 2 O 3 lattice, and this strain increases further during cooling down to RT due to different coefficients of thermal expansion of GaN and Si substrate.

Mots clés: 61.05.cp; 65.40.De; 68.55.-a; 81.15.-z

P Zaumseil, L Tarnawska, P Storck, T Schroeder. High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(111) heterostructures. Journal of Physics D: Applied Physics, 2011, 44 (31), pp.315403. ⟨10.1088/0022-3727/44/31/315403⟩. ⟨hal-00642369⟩