Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe

Yann Magnin (1) , Hung The Diep (1)

1 LPTM - UMR 8089 - Laboratoire de Physique Théorique et Modélisation

We investigate in this paper properties of the spin resistivity in the magnetic semiconducting MnTe of NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with the Néel temperature around 310K. Due to this high Néel temperature, there are many applications using its magnetic properties. The method we use here is the Monte Carlo simulation in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Néel temperature.

Mots clés: Semiconductors; Spin Transport; MnTe; Monte Carlo Simulation

Domaines: Mécanique statistique [cond-mat.stat-mech]

Yann Magnin, Hung The Diep. Monte Carlo Study of Magnetic Resistivity in Semiconducting MnTe. 2011. ⟨hal-00638620⟩