Physicochemical and electrical characterizations of atomic layer deposition grown HfO(2) on TiN and Pt for metal-insulator-metal application

Corentin Jorel (1) , Christophe Vallée (2) , Emmanuel Gourvest (2) , Bernard Pelissier (2) , Marceline Bonvalot (2) , Maurice Kahn (2) , Patrice Gonon (2)

1 électronique
2 LTM - Laboratoire des technologies de la microélectronique

This work reports on the study of two HfO(2) metal-insulator-metal structures using two different bottom metal electrodes: Pt and TiN. Different spectroscopic techniques had been used for the physicochemical characterization in order to study the junction interface and determine the oxide thickness and crystallinity: parallel angle resolved x-ray spectroscopy, vacuum ultraviolet ellipsometry, and attenuated total reflectance. Electrical characteristics of the structures with different oxide thicknesses and an evaporated gold counterelectrode are shown. Best results for very thin HfO(2) films in terms of voltage linearity are obtained with the platinum electrodes. This is correlated with differences observed between the continuous conductivity when using Pt electrode instead of TiN electrode. (C) 2009 American Vacuum Society.

Mots clés: MIM CAPACITOR; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SPECTROSCOPIC ELLIPSOMETRY; OPTICAL-PROPERTIES; DIELECTRICS; OXIDE; METALIC ELECTRODES; HfO2

Domaines: Micro et nanotechnologies/Microélectronique; Science des matériaux [cond-mat.mtrl-sci]

Corentin Jorel, Christophe Vallée, Emmanuel Gourvest, Bernard Pelissier, Marceline Bonvalot, et al.. Physicochemical and electrical characterizations of atomic layer deposition grown HfO(2) on TiN and Pt for metal-insulator-metal application. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (1), pp.378. ⟨10.1116/1.3021036⟩. ⟨hal-00633071⟩