Morphology, strain and composition of quantum dots

Christian Lang (1)

1 Department of Materials

The deposition of Ge onto Si leads to the epitaxial growth of islands with varying morphologies. The size, shape and composition of the islands are all interdependent and change continuously during growth and overgrowth of the islands. A model of the morphological changes is presented which explains the shape changes by taking into account a dynamic equilibrium between the islands, the substrate and the wetting layers.

Mots clés: Physical Sciences

Christian Lang. Morphology, strain and composition of quantum dots. Philosophical Magazine, 2010, pp.1. ⟨10.1080/14786435.2010.489888⟩. ⟨hal-00603437⟩