Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxidesfrom hole to electron injection

F Chen (1) , R Schafranek (1) , S Li (1) , W B Wu (2) , A Klein (1)

1 Institute of Materials Science
2 Hefei National Laboratory for Physical Sciences at the Microscale

The interface formation between Pb(Zr, Ti)O 3 (PZT) and RuO 2 and between PZT and In 2 O 3 :Sn (ITO), respectively was characterised using in-situ X-ray photoelectron spectroscopy (XPS). No interface reaction was observed for the interfaces studied. The Fermi level position at the interface (Schottky barrier height) is strongly different for the two electrode materials. A Fermi level position of 1.0± 0.1 eV above the valence band maximum (VBM) is observed for the contact between PZT and the high work function oxide RuO 2. For the contact between PZT and the low work function oxide ITO a Fermi level position of 2.1± 0.2 eV above the VBM is found. Energy band alignment of Pb(Zr, Ti)O 3 with RuO 2 and In 2 O 3 :Sn 2

Mots clés: Physical Sciences

F Chen, R Schafranek, S Li, W B Wu, A Klein. Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxidesfrom hole to electron injection. Journal of Physics D: Applied Physics, 2010, 43 (29), pp.295301. ⟨10.1088/0022-3727/43/29/295301⟩. ⟨hal-00597826⟩