Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

Henrique L Gomes (1) , Paulo R F Rocha (1) , Asal Kiazadeh (1) , Dago M de Leeuw (2) , Stefan C J Meskers (3)

1 CEOT - Center of Electronics Optoelectronics and Telecommunications [Faro]
2 Philips Research Laboratories
3 Molecular Materials and Nanosystems

Metal-oxide polymer diodes exhibit non-volatile resistive switching. The currentvoltage characteristics have been studied as function of temperature. The lowconductance state follows a thermally activated behavior. The high-conductance state shows a multistep-like behavior and below 300 K an enormous positive temperature coefficient. This anomalous behavior contradicts the widely held view that switching is due to filaments that are formed reversibly by the diffusion of metal atoms. Instead, these findings together with small-signal impedance measurements indicate that creation and annihilation of filaments is controlled by filling of shallow traps localized in the oxide or at the oxide/polymer interface.

Mots clés: resistive switching; non-volatile memory; bistability; electrical properties; traps. PACS: 73.20.Hb; 73.40.Qv 73.61.Ng

Henrique L Gomes, Paulo R F Rocha, Asal Kiazadeh, Dago M de Leeuw, Stefan C J Meskers. Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode. Journal of Physics D: Applied Physics, 2011, 44 (2), pp.25103. ⟨10.1088/0022-3727/44/2/025103⟩. ⟨hal-00586986⟩