Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier (1) , G. Patriarche (2) , T. Moudakir (3) , M. Abid (4) , G. Orsal (1, 4) , K. Pantzas (4) , David Troadec (5) , A. Soltani (5) , L. Largeau (2) , O. Mauguin (2) , A. Ougazzaden (4)

1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 Laboratoire de Photonique et Nanostructure, CNRS
3 SUPELEC-Campus Metz
4 Georgia Tech Lorraine [Metz]
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.

Domains: Optics [physics.optics]

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, et al.. Deep structural analysis of novel BGaN material layers grown by MOVPE. Journal of Crystal Growth, 2011, 315 (1), pp.288-291. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554231⟩