A Pressure Sensor Based on a HBAR Micromachined Structure

T. Baron (1) , D. Gachon (1) , J.-P. Romand (1) , S. Alzuaga (1) , S. Ballandras (1) , J. Masson (1) , Lise Catherinot (2) , Matthieu Chatras (2)

1 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
2 MINACOM

In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.

Domaines: Acoustique [physics.class-ph]; Acoustique [physics.class-ph]

T. Baron, D. Gachon, J.-P. Romand, S. Alzuaga, S. Ballandras, et al.. A Pressure Sensor Based on a HBAR Micromachined Structure. 2010 IEEE International Frequency Control Symposium, Jun 2010, New Port Beach, United States. pp.361-364, ⟨10.1109/FREQ.2010.5556312⟩. ⟨hal-00578203⟩