Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

Jürgen Ristein (1) , Wenying Zhang (1) , Florian Speck (1) , Markus Ostler (1) , Lothar Ley (1) , Thomas Seyller (1)

1 Lehrstuhl für Technische Physik

A solution gated field effect transistor (SGFET) has been fabricated on epitaxial single layer graphene on 6H-SiC(0001). Output and transfer characteristics were systematically studied as a function of electrolyte pH. The transfer characteristics of the device show a pH dependent shift of 19 ±1 mV/pH. From the minimum sheet conductivity observed, an average charge carrier mobility of 2 1 1 1800 100 cm V s − − ± at room temperature has been inferred. It turns out that the Fermi level in the graphene layer is strongly pinned in the vicinity of the Dirac point. The analysis of the transfer characteristics is consistent with a concentration of

Mots clés: Physical Sciences

Jürgen Ristein, Wenying Zhang, Florian Speck, Markus Ostler, Lothar Ley, et al.. Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D: Applied Physics, 2010, 43 (34), pp.345303. ⟨10.1088/0022-3727/43/34/345303⟩. ⟨hal-00569687⟩