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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2010

Large tunable photonic band gaps in nanostructured doped semiconductors

Résumé

A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
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Dates et versions

hal-00534664 , version 1 (15-11-2010)

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Jérome Léon, Thierry Taliercio. Large tunable photonic band gaps in nanostructured doped semiconductors. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (19), pp.195301. ⟨10.1103/PhysRevB.82.195301⟩. ⟨hal-00534664⟩
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