New features in the Raman spectrum of Silica: Key-points in the improvement on structure knowledge

M. Chligui (1) , G. Guimbretiere (1) , A. Canizares (1) , G. Matzen (1) , Y. Vaills (1) , Patrick Simon (1)

1 CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

This paper reports the evidence of new signatures in the low-frequency Raman spectrum of sili-ca, obtained by very high signal-to-noise experiments. Two new Raman lines are observed at 295 and 380 cm-1, and the presence of a third one at 245 cm-1 is needed to account for the experimental spectra. The origin of these supplementary lines is discussed in terms of n-membered rings of [SiO4/2] tetrahedral entities inside the glassy network.

Domains: Material chemistry

M. Chligui, G. Guimbretiere, A. Canizares, G. Matzen, Y. Vaills, et al.. New features in the Raman spectrum of Silica: Key-points in the improvement on structure knowledge. 2010. ⟨hal-00520823⟩