Structural defects in Cu doped Bi2Te3 single crystals

Jana Bludska (1) , Ivo Jakubec (1) , Cestmir Drasar (2) , Petr Lostak (3) , Jaromir Horak (4)

1 UACH / CAS - Institute of Inorganic Chemistry of the Czech Academy of Sciences
2 Physics
3 Gegeral and Inorganic Chemistry
4 Joint Laboratory of Solid State Chemistry

The relation between the concentration of free charge carriers and the concentration of copper atoms in Bi2Te3 single crystals doped with copper over a wide range of concentrations has been investigated. With the aim of clarifying the existence of inactive Cu ions. Changes in the concentration of free charge carriers arising from Cu-doping of the melt with that induced by electrochemical intercalation of copper are compared. Models of possible defect structures are proposed for both doped and intercalated single crystals of Bi2Te3.

Mots clés: Physical Sciences

Jana Bludska, Ivo Jakubec, Cestmir Drasar, Petr Lostak, Jaromir Horak. Structural defects in Cu doped Bi2Te3 single crystals. Philosophical Magazine, 2006, 87 (02), pp.325-335. ⟨10.1080/14786430600990337⟩. ⟨hal-00513772⟩