Molecular dynamics simulation of stress and grain evolution
Résumé
A three-dimensional molecular dynamics simulation is carried out to study the evolution of grains and stresses during the deposition of atoms on the (100) plane of a fcc regular crystal, using cubic system with x-y periodic boundary conditions. At the bottom an atomic surface and at the top a reflecting wall are assumed. Atoms in the system interact via the Lennard--Jones potential. During simulation the films grow according the Volmer--Weber mode and exhibit specific shape of the stress curves. When the film becomes continuous, the stress during the growth possess a maximum value, but later new grain boundaries are formed. Individual atoms in the grain boundaries generate compressive stress in the films.
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