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Article Dans Une Revue Applied Physics Letters Année : 2009

Real-time in-situ spectroscopic ellipsometry of GaSb nanostructures during sputtering: Identification of growth regimes

Résumé

We demonstrate that in-situ spectroscopic ellipsometry can be used to measure the height evo- lution of nanostructures during low energy ion sputtering of GaSb. A graded anisotropic effective medium approximation is used to extract the height from the optical measurements. Two different growth regimes have been observed, first exponential, then followed by a linear regime. The linear regime is not expected by the traditional sputtering theories. The in-situ results correspond well to ex-situ AFM measurements.
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hal-00499356 , version 1 (12-07-2010)

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  • HAL Id : hal-00499356 , version 1

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Ingar S. Nerbo, Sébastien Le Roy, Morten Kildemo, Elin Sondergard. Real-time in-situ spectroscopic ellipsometry of GaSb nanostructures during sputtering: Identification of growth regimes. Applied Physics Letters, 2009, 94 (21), pp.213105. ⟨hal-00499356⟩
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