Random local strain effects in homovalent-substituted relaxor ferroelectrics: a first-principles study of BaTi0.74Zr0.26O3 - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2010

Random local strain effects in homovalent-substituted relaxor ferroelectrics: a first-principles study of BaTi0.74Zr0.26O3

Claire Laulhé
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Résumé

We present first-principles supercell calculations on BaTi0.74Zr0.26O3, a prototype material for relaxors with a homovalent substitution. From a statistical analysis of relaxed structures, we give evidence for four types of Ti-atom polar displacements: along the < 1 1 1 >, < 1 1 0 >, or < 1 0 0 > directions of the cubic unit cell, or almost cancelled. The type of a Ti displacement is entirely determined by the Ti/Zr distribution in the adjacent unit cells. The underlying mechanism involves local strain effects that ensue from the difference in size between the Ti4+ and Zr4+ cations. These results shed light on the structural mechanisms that lead to disordered Ti displacements in BaTi(1-x)Zr(x)O3 relaxors, and probably in other BaTiO3-based relaxors with homovalent substitution.
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Dates et versions

hal-00490197 , version 1 (08-06-2010)

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Claire Laulhé, Alain Pasturel, Francoise Hippert, Jens Kreisel. Random local strain effects in homovalent-substituted relaxor ferroelectrics: a first-principles study of BaTi0.74Zr0.26O3. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.132102. ⟨10.1103/PhysRevB.82.132102⟩. ⟨hal-00490197⟩
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